Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (Vth) and field effect mobility (μFE) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (Vth) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs.

    Original languageEnglish
    Pages (from-to)489-491
    Number of pages3
    JournalElectronic Materials Letters
    Volume9
    Issue number4
    DOIs
    Publication statusPublished - 2013 Jul

    Keywords

    • SiO
    • oxide thin film transistor
    • solution process
    • threshold voltage

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

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