Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature

Jun Young Choi; Sang Sig Kim; Sang Yeol Lee

doi:10.1007/s13391-013-0045-x

Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (V_th) and field effect mobility (μ_FE) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (V_th) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs.

Original language	English
Pages (from-to)	489-491
Number of pages	3
Journal	Electronic Materials Letters
Volume	9
Issue number	4
DOIs	https://doi.org/10.1007/s13391-013-0045-x
Publication status	Published - 2013 Jul

Keywords

SiO
oxide thin film transistor
solution process
threshold voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1007/s13391-013-0045-x

Cite this

@article{3607a22ce4514fcaafbe8376cba5b5c3,

title = "Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature",

abstract = "The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (Vth) and field effect mobility (μFE) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (Vth) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs.",

keywords = "SiO, oxide thin film transistor, solution process, threshold voltage",

author = "Choi, {Jun Young} and Kim, {Sang Sig} and Lee, {Sang Yeol}",

year = "2013",

month = jul,

doi = "10.1007/s13391-013-0045-x",

language = "English",

volume = "9",

pages = "489--491",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "4",

}

TY - JOUR

T1 - Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature

AU - Choi, Jun Young

AU - Kim, Sang Sig

AU - Lee, Sang Yeol

PY - 2013/7

Y1 - 2013/7

N2 - The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (Vth) and field effect mobility (μFE) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (Vth) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs.

AB - The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (Vth) and field effect mobility (μFE) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (Vth) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs.

KW - SiO

KW - oxide thin film transistor

KW - solution process

KW - threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=84880425913&partnerID=8YFLogxK

U2 - 10.1007/s13391-013-0045-x

DO - 10.1007/s13391-013-0045-x

M3 - Article

AN - SCOPUS:84880425913

SN - 1738-8090

VL - 9

SP - 489

EP - 491

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 4

ER -

Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this