TY - GEN
T1 - Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit
AU - Kim, Jooyoon
AU - Park, Jongsun
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/10/21
Y1 - 2020/10/21
N2 - Due to limited scalability and leakage power of CMOS-based logic circuit, Spin Transfer Torque (STT) device, which has the characteristics of a low area, zero leakage power, nonvolatile and infinite endurance, is one of the strongest candidates to overcome limitations of CMOS. Based on these characteristics, efforts have been made to develop STT-device logic circuit. However, STT-device logic circuit has encountered the problem of read reliability. To address read reliability issue, we propose a new Sense amplifier, named variation-Tolerant separated precharge sense amplifier. This circuit, by using transmission gate and feedback, is resilient to process variation and has high read reliability. Simulation using the 65nm process is conducted to show the performance of the proposed sensing circuit. Simulation results demonstrate that the reading error rate of the proposed sense amplifier decreased by 68% and 37% respectively, compared to the conventional SPCSA and RESPCSA.
AB - Due to limited scalability and leakage power of CMOS-based logic circuit, Spin Transfer Torque (STT) device, which has the characteristics of a low area, zero leakage power, nonvolatile and infinite endurance, is one of the strongest candidates to overcome limitations of CMOS. Based on these characteristics, efforts have been made to develop STT-device logic circuit. However, STT-device logic circuit has encountered the problem of read reliability. To address read reliability issue, we propose a new Sense amplifier, named variation-Tolerant separated precharge sense amplifier. This circuit, by using transmission gate and feedback, is resilient to process variation and has high read reliability. Simulation using the 65nm process is conducted to show the performance of the proposed sensing circuit. Simulation results demonstrate that the reading error rate of the proposed sense amplifier decreased by 68% and 37% respectively, compared to the conventional SPCSA and RESPCSA.
KW - Magnetic Tunnel Junction (MTJ)
KW - Nonvolatile logic
KW - Reliability
KW - Sense amplifier
KW - Spin-Transfer Torque (STT)
UR - http://www.scopus.com/inward/record.url?scp=85100746930&partnerID=8YFLogxK
U2 - 10.1109/ISOCC50952.2020.9333037
DO - 10.1109/ISOCC50952.2020.9333037
M3 - Conference contribution
AN - SCOPUS:85100746930
T3 - Proceedings - International SoC Design Conference, ISOCC 2020
SP - 147
EP - 148
BT - Proceedings - International SoC Design Conference, ISOCC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th International System-on-Chip Design Conference, ISOCC 2020
Y2 - 21 October 2020 through 24 October 2020
ER -