Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit

Jooyoon Kim; Jongsun Park

doi:10.1109/ISOCC50952.2020.9333037

Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit

Jooyoon Kim
, Jongsun Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Due to limited scalability and leakage power of CMOS-based logic circuit, Spin Transfer Torque (STT) device, which has the characteristics of a low area, zero leakage power, nonvolatile and infinite endurance, is one of the strongest candidates to overcome limitations of CMOS. Based on these characteristics, efforts have been made to develop STT-device logic circuit. However, STT-device logic circuit has encountered the problem of read reliability. To address read reliability issue, we propose a new Sense amplifier, named variation-Tolerant separated precharge sense amplifier. This circuit, by using transmission gate and feedback, is resilient to process variation and has high read reliability. Simulation using the 65nm process is conducted to show the performance of the proposed sensing circuit. Simulation results demonstrate that the reading error rate of the proposed sense amplifier decreased by 68% and 37% respectively, compared to the conventional SPCSA and RESPCSA.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference, ISOCC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	147-148
Number of pages	2
ISBN (Electronic)	9781728183312
DOIs	https://doi.org/10.1109/ISOCC50952.2020.9333037
Publication status	Published - 2020 Oct 21
Event	17th International System-on-Chip Design Conference, ISOCC 2020 - Yeosu, Korea, Republic of Duration: 2020 Oct 21 → 2020 Oct 24

Publication series

Name	Proceedings - International SoC Design Conference, ISOCC 2020

Conference

Conference	17th International System-on-Chip Design Conference, ISOCC 2020
Country/Territory	Korea, Republic of
City	Yeosu
Period	20/10/21 → 20/10/24

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

Magnetic Tunnel Junction (MTJ)
Nonvolatile logic
Reliability
Sense amplifier
Spin-Transfer Torque (STT)

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Instrumentation
Artificial Intelligence
Hardware and Architecture

Access to Document

10.1109/ISOCC50952.2020.9333037

Cite this

Kim, J., & Park, J. (2020). Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit. In Proceedings - International SoC Design Conference, ISOCC 2020 (pp. 147-148). Article 9333037 (Proceedings - International SoC Design Conference, ISOCC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC50952.2020.9333037

Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit. / Kim, Jooyoon; Park, Jongsun.
Proceedings - International SoC Design Conference, ISOCC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 147-148 9333037 (Proceedings - International SoC Design Conference, ISOCC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, J & Park, J 2020, Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit. in Proceedings - International SoC Design Conference, ISOCC 2020., 9333037, Proceedings - International SoC Design Conference, ISOCC 2020, Institute of Electrical and Electronics Engineers Inc., pp. 147-148, 17th International System-on-Chip Design Conference, ISOCC 2020, Yeosu, Korea, Republic of, 20/10/21. https://doi.org/10.1109/ISOCC50952.2020.9333037

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title = "Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit",

abstract = "Due to limited scalability and leakage power of CMOS-based logic circuit, Spin Transfer Torque (STT) device, which has the characteristics of a low area, zero leakage power, nonvolatile and infinite endurance, is one of the strongest candidates to overcome limitations of CMOS. Based on these characteristics, efforts have been made to develop STT-device logic circuit. However, STT-device logic circuit has encountered the problem of read reliability. To address read reliability issue, we propose a new Sense amplifier, named variation-Tolerant separated precharge sense amplifier. This circuit, by using transmission gate and feedback, is resilient to process variation and has high read reliability. Simulation using the 65nm process is conducted to show the performance of the proposed sensing circuit. Simulation results demonstrate that the reading error rate of the proposed sense amplifier decreased by 68\% and 37\% respectively, compared to the conventional SPCSA and RESPCSA. ",

keywords = "Magnetic Tunnel Junction (MTJ), Nonvolatile logic, Reliability, Sense amplifier, Spin-Transfer Torque (STT)",

author = "Jooyoon Kim and Jongsun Park",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 17th International System-on-Chip Design Conference, ISOCC 2020 ; Conference date: 21-10-2020 Through 24-10-2020",

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N2 - Due to limited scalability and leakage power of CMOS-based logic circuit, Spin Transfer Torque (STT) device, which has the characteristics of a low area, zero leakage power, nonvolatile and infinite endurance, is one of the strongest candidates to overcome limitations of CMOS. Based on these characteristics, efforts have been made to develop STT-device logic circuit. However, STT-device logic circuit has encountered the problem of read reliability. To address read reliability issue, we propose a new Sense amplifier, named variation-Tolerant separated precharge sense amplifier. This circuit, by using transmission gate and feedback, is resilient to process variation and has high read reliability. Simulation using the 65nm process is conducted to show the performance of the proposed sensing circuit. Simulation results demonstrate that the reading error rate of the proposed sense amplifier decreased by 68% and 37% respectively, compared to the conventional SPCSA and RESPCSA.

AB - Due to limited scalability and leakage power of CMOS-based logic circuit, Spin Transfer Torque (STT) device, which has the characteristics of a low area, zero leakage power, nonvolatile and infinite endurance, is one of the strongest candidates to overcome limitations of CMOS. Based on these characteristics, efforts have been made to develop STT-device logic circuit. However, STT-device logic circuit has encountered the problem of read reliability. To address read reliability issue, we propose a new Sense amplifier, named variation-Tolerant separated precharge sense amplifier. This circuit, by using transmission gate and feedback, is resilient to process variation and has high read reliability. Simulation using the 65nm process is conducted to show the performance of the proposed sensing circuit. Simulation results demonstrate that the reading error rate of the proposed sense amplifier decreased by 68% and 37% respectively, compared to the conventional SPCSA and RESPCSA.

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KW - Reliability

KW - Sense amplifier

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BT - Proceedings - International SoC Design Conference, ISOCC 2020

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ER -

Variation-Tolerant Separated Pre-Charge Sense Amplifier for Resistive Non-Volatile logic circuit

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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