Abstract
In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the Pmax point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.
Original language | English |
---|---|
Article number | 5783 |
Journal | Energies |
Volume | 13 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2020 Nov 1 |
Bibliographical note
Publisher Copyright:© 2020 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
- Grain boundary
- Hydrogen passivation
- Multicrystalline silicon
- Photoconductance
- Trapping effect
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Energy Engineering and Power Technology
- Energy (miscellaneous)
- Control and Optimization
- Electrical and Electronic Engineering