Variations in minority carrier-trapping effects caused by hydrogen passivation in multicrystalline silicon wafer

Yujin Jung; Kwan Hong Min; Soohyun Bae; Yoon Mook Kang; Donghwan Kim; Hae Seok Lee

doi:10.3390/en13215783

Variations in minority carrier-trapping effects caused by hydrogen passivation in multicrystalline silicon wafer

Yujin Jung, Kwan Hong Min, Soohyun Bae, Yoon Mook Kang, Donghwan Kim, Hae Seok Lee

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the P_max point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.

Original language	English
Article number	5783
Journal	Energies
Volume	13
Issue number	21
DOIs	https://doi.org/10.3390/en13215783
Publication status	Published - 2020 Nov 1

Keywords

Grain boundary
Hydrogen passivation
Multicrystalline silicon
Photoconductance
Trapping effect

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Energy (miscellaneous)
Control and Optimization
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Variations in minority carrier-trapping effects caused by hydrogen passivation in multicrystalline silicon wafer",

abstract = "In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the Pmax point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.",

keywords = "Grain boundary, Hydrogen passivation, Multicrystalline silicon, Photoconductance, Trapping effect",

author = "Yujin Jung and Min, {Kwan Hong} and Soohyun Bae and Kang, {Yoon Mook} and Donghwan Kim and Lee, {Hae Seok}",

note = "Funding Information: Funding: This work was supported by the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial from the Ministry of Trade, Industry and Energy, Republic of Korea. (Nos. 20193091010240 and 20193010014530). This work was also supported by the KU-KIST Graduate School Project. Publisher Copyright: {\textcopyright} 2020 by the authors. Licensee MDPI, Basel, Switzerland.",

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doi = "10.3390/en13215783",

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AU - Jung, Yujin

AU - Min, Kwan Hong

AU - Bae, Soohyun

AU - Kang, Yoon Mook

AU - Kim, Donghwan

AU - Lee, Hae Seok

N1 - Funding Information: Funding: This work was supported by the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial from the Ministry of Trade, Industry and Energy, Republic of Korea. (Nos. 20193091010240 and 20193010014530). This work was also supported by the KU-KIST Graduate School Project. Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the Pmax point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.

AB - In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low injection level close to the Pmax point. Therefore, it is necessary to understand this effect and effectively minimize the trapping-center density. In this study, the variations in the minority carrier-trapping effect of hydrogen at different annealing temperatures in an mc-Si were observed using QSSPC, time-of-flight secondary ion mass spectroscopy, and atom probe tomography. A trapping effect was confirmed and occurred in the grain boundary area, and the effect was reduced by hydrogen. Thus, in an mc-Si wafer, effective hydrogen passivation on the grain area and grain boundary is crucial and was experimentally proven to minimize the distortion of the carrier lifetime.

KW - Grain boundary

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KW - Photoconductance

KW - Trapping effect

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Variations in minority carrier-trapping effects caused by hydrogen passivation in multicrystalline silicon wafer

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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