Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

Min Ju Kim, Ju Hyun Park, Dong Su Jeon, Tae Ho Lee, Tae Geun Kim

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

    Original languageEnglish
    Title of host publication2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781467371094
    DOIs
    Publication statusPublished - 2016 Jan 7
    Event11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of
    Duration: 2015 Aug 242015 Aug 28

    Publication series

    Name2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
    Volume2

    Other

    Other11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
    Country/TerritoryKorea, Republic of
    CityBusan
    Period15/8/2415/8/28

    Bibliographical note

    Funding Information:
    This work was supported by a government grant from the National Research Foundation of Korea (NRF) (No. 2011-0028769)

    Publisher Copyright:
    © 2015 IEEE.

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics

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