We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
|Title of host publication||2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2016 Jan 7|
|Event||11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of|
Duration: 2015 Aug 24 → 2015 Aug 28
|Name||2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015|
|Other||11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015|
|Country/Territory||Korea, Republic of|
|Period||15/8/24 → 15/8/28|
Bibliographical noteFunding Information:
This work was supported by a government grant from the National Research Foundation of Korea (NRF) (No. 2011-0028769)
© 2015 IEEE.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics