Abstract
We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
Original language | English |
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Title of host publication | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781467371094 |
DOIs | |
Publication status | Published - 2016 Jan 7 |
Event | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of Duration: 2015 Aug 24 → 2015 Aug 28 |
Publication series
Name | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
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Volume | 2 |
Other
Other | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
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Country/Territory | Korea, Republic of |
City | Busan |
Period | 15/8/24 → 15/8/28 |
Bibliographical note
Funding Information:This work was supported by a government grant from the National Research Foundation of Korea (NRF) (No. 2011-0028769)
Publisher Copyright:
© 2015 IEEE.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics