Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

Min Ju Kim; Ju Hyun Park; Dong Su Jeon; Tae Ho Lee; Tae Geun Kim

doi:10.1109/CLEOPR.2015.7376173

Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

Min Ju Kim, Ju Hyun Park, Dong Su Jeon, Tae Ho Lee, Tae Geun Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

Original language	English
Title of host publication	2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467371094
DOIs	https://doi.org/10.1109/CLEOPR.2015.7376173
Publication status	Published - 2016 Jan 7
Event	11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of Duration: 2015 Aug 24 → 2015 Aug 28

Publication series

Name	2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Volume	2

Other

Other	11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Country/Territory	Korea, Republic of
City	Busan
Period	15/8/24 → 15/8/28

Bibliographical note

Funding Information:
This work was supported by a government grant from the National Research Foundation of Korea (NRF) (No. 2011-0028769)

Publisher Copyright:
© 2015 IEEE.

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/CLEOPR.2015.7376173

Cite this

Kim, M. J., Park, J. H., Jeon, D. S., Lee, T. H., & Kim, T. G. (2016). Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 Article 7376173 (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7376173

Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. / Kim, Min Ju; Park, Ju Hyun; Jeon, Dong Su et al.
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7376173 (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, MJ, Park, JH, Jeon, DS, Lee, TH & Kim, TG 2016, Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015., 7376173, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, vol. 2, Institute of Electrical and Electronics Engineers Inc., 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Busan, Korea, Republic of, 15/8/24. https://doi.org/10.1109/CLEOPR.2015.7376173

Kim MJ, Park JH, Jeon DS, Lee TH, Kim TG. Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7376173. (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015). doi: 10.1109/CLEOPR.2015.7376173

Kim, Min Ju ; Park, Ju Hyun ; Jeon, Dong Su et al. / Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Institute of Electrical and Electronics Engineers Inc., 2016. (2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015).

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title = "Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes",

abstract = "We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7\% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.",

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note = "Funding Information: This work was supported by a government grant from the National Research Foundation of Korea (NRF) (No. 2011-0028769) Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 ; Conference date: 24-08-2015 Through 28-08-2015",

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N2 - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

AB - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

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DO - 10.1109/CLEOPR.2015.7376173

M3 - Conference contribution

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T3 - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

Y2 - 24 August 2015 through 28 August 2015

ER -

Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

Abstract

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