The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)