The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Mar 10|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)