Vertical and lateral mobilities in n-(Ga, Mn)N

Jihyun Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada, R. G. Wilson

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.

Original languageEnglish
Pages (from-to)1565-1567
Number of pages3
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2003 Mar 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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