Vertical conduction behavior through atomic graphene device under transverse electric field

Yun Hi Lee, Yoon Joong Kim, J. H. Lee

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14 Citations (Scopus)


Many studies have characterized disordered graphene layers as variable-range hopping and activated hopping conduction for a graphene structure with planar left and right electrodes. We report the electrical transport measurements of atomic-thick-graphene with top and bottom Ti/Pt electrodes. In the vertical device of metal-graphene-metal under a transverse electric field, the current at the low field or high temperature was explained by bulk-limited conduction, so called Ohmic current. On the other hand, space-charge-limited- conduction dominated at low temperatures or under high fields. The estimated trap concentration for the high field or low temperature conduction was approximately 3.7× 1017 cm-3, and from a cessation of the power law dependence in the J-V characteristics it was determined that the onset of failure breakdown of the vertical GL structure began after dissipating power of 2.7× 1012 W m-3.

Original languageEnglish
Article number133112
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2011 Mar 28

Bibliographical note

Funding Information:
This work was supported by National Research Laboratory (NRL) (contract number 2010-0008004) Program of NRF in Korea.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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