Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son, Sunjae Chung, Sun Young Yea, Shinhee Kim, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

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5 Citations (Scopus)

Abstract

The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.

Original languageEnglish
Article number092105
JournalApplied Physics Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2010

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687); by the Seoul R&DB Program (10543); and by the National Science Foundation under Grant No. DMR06-03762.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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