Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates

Youngin Jeon; Sangsig Kim

doi:10.1002/pssa.201330555

Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates

Youngin Jeon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al ₂O₃ material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined.

Original language	English
Pages (from-to)	1928-1932
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	211
Issue number	8
DOIs	https://doi.org/10.1002/pssa.201330555
Publication status	Published - 2014 Aug

Keywords

ZnO
field-effect transistors
multilayers
nanowires
plastics
substrates

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201330555

Cite this

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title = "Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates",

abstract = "In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al 2O3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined.",

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AU - Kim, Sangsig

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AB - In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al 2O3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined.

KW - ZnO

KW - field-effect transistors

KW - multilayers

KW - nanowires

KW - plastics

KW - substrates

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JF - Physica Status Solidi (A) Applications and Materials Science

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Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates

Abstract

Keywords

ASJC Scopus subject areas

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