Very high (>1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

R. Malik; E. Gulari; P. Bhattacharya; K. K. Linder; J. S. Rieh

doi:10.1063/1.119074

Very high (>10¹⁹ cm^-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

R. Malik, E. Gulari, P. Bhattacharya, K. K. Linder, J. S. Rieh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×10¹⁹ cm^-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.

Original language	English
Pages (from-to)	1149-1151
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	9
DOIs	https://doi.org/10.1063/1.119074
Publication status	Published - 1997 Mar 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.119074

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abstract = "The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.",

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AU - Malik, R.

AU - Gulari, E.

AU - Bhattacharya, P.

AU - Linder, K. K.

AU - Rieh, J. S.

PY - 1997/3/3

Y1 - 1997/3/3

N2 - The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.

AB - The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.

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JF - Applied Physics Letters

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Very high (>10¹⁹ cm^-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

Abstract

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