Abstract
The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.
Original language | English |
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Pages (from-to) | 1149-1151 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1997 Mar 3 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)