Very high (>1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

R. Malik, E. Gulari, P. Bhattacharya, K. K. Linder, J. S. Rieh

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

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Physics & Astronomy