Abstract
We report on photocurrent spectra of Be-doped p-type modulation-doped quantum dot infrared photodetector structure. We have observed a broad photocurrent signal in a photon energy range of 100-400 meV (wavelength range of 3-10 μm) due to bound-to-continuum intersubband absorption of normal incidence radiation in the valence band of InAs self-assembled quantum dots, showing a peak sensitivity around hv= 190 meV. Furthermore, the observed responsivity was as high as 16 A/W at T = 10 K, which is to our knowledge, the highest value ever reported for quantum dot infrared photodetectors.
Original language | English |
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Pages (from-to) | 77-80 |
Number of pages | 4 |
Journal | Institute of Physics Conference Series |
Volume | 184 |
Publication status | Published - 2005 |
Event | 31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 2004 Sept 12 → 2004 Dec 16 |
ASJC Scopus subject areas
- General Physics and Astronomy