TY - JOUR
T1 - Via-hole-type flip-chip packaging to improve the thermal characteristics and reliability of blue light emitting diodes
AU - Kim, Ho Young
AU - Lim, Chang Man
AU - Kim, Ki Seok
AU - Oh, Jeong Tak
AU - Jeong, Hwan Hee
AU - Song, June O.
AU - Seong, Tae Yeon
AU - Amano, Hiroshi
N1 - Publisher Copyright:
© 2019 The Electrochemical Society.
PY - 2019
Y1 - 2019
N2 - We investigated the effect of via-holes in the lead-frame on the reliability of blue flip-chip light-emitting diodes (FCLEDs). For bonding, conventional Sn-Ag(3.0%)-Cu(0.5%) solder (SAC) and Ag sintered paste were adopted. Lateral LED, conventional FCLED (c-FCLED), and via-hole FCLED gave efficacies of 218.5, 221.6 and 225 lm/W at 30 mA. The lateral LED sample (bonding material: silicone), c-FCLED sample (SAC), via-hole-type sample (Ag sinter), and via-hole-type sample (SAC) exhibited total thermal resistance of 15.24, 10.19, 8.95, and 11.79 K/W, respectively. The humidity/temperature/H2S gas reliability examinations showed that unlike the via-hole-type samples, the lumen of the c-FCLED was fallen by 15.0% after exposure for 500 h. Furthermore, the c-FCLED exhibited a 19.6% higher forward voltage than the via-hole FCLED after 1,000 thermal-cycles. SEM results showed that unlike the via-hole type FCLED, the c-FCLED underwent cracking after thermal cycle of 1000 times.
AB - We investigated the effect of via-holes in the lead-frame on the reliability of blue flip-chip light-emitting diodes (FCLEDs). For bonding, conventional Sn-Ag(3.0%)-Cu(0.5%) solder (SAC) and Ag sintered paste were adopted. Lateral LED, conventional FCLED (c-FCLED), and via-hole FCLED gave efficacies of 218.5, 221.6 and 225 lm/W at 30 mA. The lateral LED sample (bonding material: silicone), c-FCLED sample (SAC), via-hole-type sample (Ag sinter), and via-hole-type sample (SAC) exhibited total thermal resistance of 15.24, 10.19, 8.95, and 11.79 K/W, respectively. The humidity/temperature/H2S gas reliability examinations showed that unlike the via-hole-type samples, the lumen of the c-FCLED was fallen by 15.0% after exposure for 500 h. Furthermore, the c-FCLED exhibited a 19.6% higher forward voltage than the via-hole FCLED after 1,000 thermal-cycles. SEM results showed that unlike the via-hole type FCLED, the c-FCLED underwent cracking after thermal cycle of 1000 times.
UR - http://www.scopus.com/inward/record.url?scp=85072663617&partnerID=8YFLogxK
U2 - 10.1149/2.0171909jss
DO - 10.1149/2.0171909jss
M3 - Article
AN - SCOPUS:85072663617
SN - 2162-8769
VL - 8
SP - P165-P170
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 9
ER -