The difficulty associated with the precise positioning of nanowires has been one of the most significant issues hindering nanoelectronic integration. In this paper, we employed dielectrophoretic force to manipulate n-type GaN nano- and microwires onto a p-type GaN thin film to form a pristine p-n homojunction. The GaN wires were attracted to the n-type Ohmic metal in a direction parallel to the electric field, which was consistent with our simulation results. Violet electroluminescence emanated from the point of the n-GaN wire in contact with the p-GaN thin film. This p-n homojunction device displayed forward conduction above 6-9 V and current rectifying behavior down to a -20 V reverse bias. The current-voltage characteristics are distinctive of a p-n homojunction formed without deleterious damage or contamination.
Bibliographical noteFunding Information:
Research at NRL is partially supported by ONR. This research at Korea University was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0088551).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)