Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays

K. C. Kim; Y. M. Sung; I. H. Lee; C. R. Lee; M. D. Kim; Y. Park; T. G. Kim

doi:10.1116/1.2192523

Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays

K. C. Kim, Y. M. Sung, I. H. Lee, C. R. Lee, M. D. Kim, Y. Park, T. G. Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8×8 backside-illuminated AlGaN p-i-n photodiode arrays. The discreteAlGaN p-i-n photodiodes showed a responsivity of 0.1 AW, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8×8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 μm 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8×8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands.

Original language	English
Pages (from-to)	641-644
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	24
Issue number	3
DOIs	https://doi.org/10.1116/1.2192523
Publication status	Published - 2006

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{e2f681a5646a463f86fd535778498776,

title = "Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays",

abstract = "We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8×8 backside-illuminated AlGaN p-i-n photodiode arrays. The discreteAlGaN p-i-n photodiodes showed a responsivity of 0.1 AW, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8×8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 μm 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8×8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands.",

author = "Kim, {K. C.} and Sung, {Y. M.} and Lee, {I. H.} and Lee, {C. R.} and Kim, {M. D.} and Y. Park and Kim, {T. G.}",

note = "Funding Information: This work was partly supported by KOSEF through q - P si at Hanyang University, Korea. ",

year = "2006",

doi = "10.1116/1.2192523",

language = "English",

volume = "24",

pages = "641--644",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

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TY - JOUR

T1 - Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays

AU - Kim, K. C.

AU - Sung, Y. M.

AU - Lee, I. H.

AU - Lee, C. R.

AU - Kim, M. D.

AU - Park, Y.

AU - Kim, T. G.

N1 - Funding Information: This work was partly supported by KOSEF through q - P si at Hanyang University, Korea.

PY - 2006

Y1 - 2006

N2 - We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8×8 backside-illuminated AlGaN p-i-n photodiode arrays. The discreteAlGaN p-i-n photodiodes showed a responsivity of 0.1 AW, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8×8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 μm 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8×8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands.

AB - We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8×8 backside-illuminated AlGaN p-i-n photodiode arrays. The discreteAlGaN p-i-n photodiodes showed a responsivity of 0.1 AW, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8×8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 μm 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8×8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands.

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DO - 10.1116/1.2192523

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SN - 0734-2101

VL - 24

SP - 641

EP - 644

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 3

ER -

Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays

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