Visualization of local gate control in a ZnO inter-nanowire junction device

Jin Hyung Lim, Hyun Jin Ji, Goo Eun Jung, Kyung Hoon Chung, Gyu Tae Kim, Jeong Sook Ha, Ji Yong Park, Se Jong Kahng

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.

    Original languageEnglish
    Pages (from-to)320-323
    Number of pages4
    JournalSolid-State Electronics
    Volume53
    Issue number3
    DOIs
    Publication statusPublished - 2009 Mar

    Bibliographical note

    Funding Information:
    The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710) and Korea university research fund.

    Keywords

    • Atomic force microscopy
    • Nanowire
    • Scanning gate microscopy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry
    • Electrical and Electronic Engineering

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