Visualization of local gate control in a ZnO inter-nanowire junction device

Jin Hyung Lim, Hyun Jin Ji, Goo Eun Jung, Kyung Hoon Chung, Gyu Tae Kim, Jeong Sook Ha, Ji Yong Park, Se Jong Kahng

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.

Original languageEnglish
Pages (from-to)320-323
Number of pages4
JournalSolid-State Electronics
Issue number3
Publication statusPublished - 2009 Mar


  • Atomic force microscopy
  • Nanowire
  • Scanning gate microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Visualization of local gate control in a ZnO inter-nanowire junction device'. Together they form a unique fingerprint.

Cite this