Visualization of local gate control in a ZnO inter-nanowire junction device

Jin Hyung Lim; Hyun Jin Ji; Goo Eun Jung; Kyung Hoon Chung; Gyu Tae Kim; Jeong Sook Ha; Ji Yong Park; Se Jong Kahng

doi:10.1016/j.sse.2009.01.001

Visualization of local gate control in a ZnO inter-nanowire junction device

Jin Hyung Lim, Hyun Jin Ji, Goo Eun Jung, Kyung Hoon Chung, Gyu Tae Kim, Jeong Sook Ha, Ji Yong Park, Se Jong Kahng

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.

Original language	English
Pages (from-to)	320-323
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2009.01.001
Publication status	Published - 2009 Mar

Bibliographical note

Funding Information:
The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710) and Korea university research fund.

Keywords

Atomic force microscopy
Nanowire
Scanning gate microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.sse.2009.01.001

Cite this

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title = "Visualization of local gate control in a ZnO inter-nanowire junction device",

abstract = "Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.",

keywords = "Atomic force microscopy, Nanowire, Scanning gate microscopy",

author = "Lim, {Jin Hyung} and Ji, {Hyun Jin} and Jung, {Goo Eun} and Chung, {Kyung Hoon} and Kim, {Gyu Tae} and Ha, {Jeong Sook} and Park, {Ji Yong} and Kahng, {Se Jong}",

note = "Funding Information: The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710) and Korea university research fund.",

year = "2009",

month = mar,

doi = "10.1016/j.sse.2009.01.001",

language = "English",

volume = "53",

pages = "320--323",

journal = "Solid-State Electronics",

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T1 - Visualization of local gate control in a ZnO inter-nanowire junction device

AU - Lim, Jin Hyung

AU - Ji, Hyun Jin

AU - Jung, Goo Eun

AU - Chung, Kyung Hoon

AU - Kim, Gyu Tae

AU - Ha, Jeong Sook

AU - Park, Ji Yong

AU - Kahng, Se Jong

N1 - Funding Information: The authors acknowledge financial support by the Korean Government (KRF-2004-005-C00060, R01-2007-000-11545-0 and M10503000187-05M0300-18710) and Korea university research fund.

PY - 2009/3

Y1 - 2009/3

N2 - Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.

AB - Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices.

KW - Atomic force microscopy

KW - Nanowire

KW - Scanning gate microscopy

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U2 - 10.1016/j.sse.2009.01.001

DO - 10.1016/j.sse.2009.01.001

M3 - Article

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SN - 0038-1101

VL - 53

SP - 320

EP - 323

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Visualization of local gate control in a ZnO inter-nanowire junction device

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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