Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films

Young Pyo Hong; Seok Ha; Ha Yong Lee; Young Cheol Lee; Kyung Hyun Ko; Dong Wan Kim; Hee Bum Hong; Kug Sun Hong

doi:10.1016/S0040-6090(02)00744-7

Voltage tunable dielectric properties of rf sputtered Bi₂O₃-ZnO-Nb₂O₅ pyrochlore thin films

Young Pyo Hong, Seok Ha, Ha Yong Lee, Young Cheol Lee, Kyung Hyun Ko, Dong Wan Kim, Hee Bum Hong, Kug Sun Hong

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

The Bi₂O₃-ZnO-Nb₂O₅ (BZN) pyrochlore thin films were prepared on platinized Si substrates using a reactive rf magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable dielectric properties of films with deposition parameters were investigated. The sputter deposited BZN pyrochlore thin films have a cubic pyrochlore phase and secondary phases of zinc niobate and bismuth niobate when crystallized at 600-800 °C. The dielectric constant and tunability of thin films changed with an O₂/Ar ratio and post-annealing temperature. The BZN pyrochlore thin films sputtered in 15% O₂ and annealed at 700 °C had a dielectric constant of 153, tan δ of 0.003 and maximum tunability of 14% at 1000 kV/cm of dc bias field under 1 MHz.

Original language	English
Pages (from-to)	183-188
Number of pages	6
Journal	Thin Solid Films
Volume	419
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)00744-7
Publication status	Published - 2002 Nov 1
Externally published	Yes

Keywords

Dielectric properties
Pyrochlore
Sputtering
Tunability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(02)00744-7

Cite this

@article{a038a95040f0489c83a07f2e93a688ee,

title = "Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films",

abstract = "The Bi2O3-ZnO-Nb2O5 (BZN) pyrochlore thin films were prepared on platinized Si substrates using a reactive rf magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable dielectric properties of films with deposition parameters were investigated. The sputter deposited BZN pyrochlore thin films have a cubic pyrochlore phase and secondary phases of zinc niobate and bismuth niobate when crystallized at 600-800 °C. The dielectric constant and tunability of thin films changed with an O2/Ar ratio and post-annealing temperature. The BZN pyrochlore thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of 0.003 and maximum tunability of 14% at 1000 kV/cm of dc bias field under 1 MHz.",

keywords = "Dielectric properties, Pyrochlore, Sputtering, Tunability",

author = "{Pyo Hong}, Young and Seok Ha and {Yong Lee}, Ha and {Cheol Lee}, Young and {Hyun Ko}, Kyung and Kim, {Dong Wan} and {Bum Hong}, Hee and {Sun Hong}, Kug",

note = "Funding Information: This study is supported in part by the Ministry of Information and Communication of Korea ({\textquoteleft}Support Project of University foundation research 〈2000〉{\textquoteright} supervised by IITA). ",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0040-6090(02)00744-7",

language = "English",

volume = "419",

pages = "183--188",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films

AU - Pyo Hong, Young

AU - Ha, Seok

AU - Yong Lee, Ha

AU - Cheol Lee, Young

AU - Hyun Ko, Kyung

AU - Kim, Dong Wan

AU - Bum Hong, Hee

AU - Sun Hong, Kug

N1 - Funding Information: This study is supported in part by the Ministry of Information and Communication of Korea (‘Support Project of University foundation research 〈2000〉’ supervised by IITA).

PY - 2002/11/1

Y1 - 2002/11/1

N2 - The Bi2O3-ZnO-Nb2O5 (BZN) pyrochlore thin films were prepared on platinized Si substrates using a reactive rf magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable dielectric properties of films with deposition parameters were investigated. The sputter deposited BZN pyrochlore thin films have a cubic pyrochlore phase and secondary phases of zinc niobate and bismuth niobate when crystallized at 600-800 °C. The dielectric constant and tunability of thin films changed with an O2/Ar ratio and post-annealing temperature. The BZN pyrochlore thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of 0.003 and maximum tunability of 14% at 1000 kV/cm of dc bias field under 1 MHz.

AB - The Bi2O3-ZnO-Nb2O5 (BZN) pyrochlore thin films were prepared on platinized Si substrates using a reactive rf magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable dielectric properties of films with deposition parameters were investigated. The sputter deposited BZN pyrochlore thin films have a cubic pyrochlore phase and secondary phases of zinc niobate and bismuth niobate when crystallized at 600-800 °C. The dielectric constant and tunability of thin films changed with an O2/Ar ratio and post-annealing temperature. The BZN pyrochlore thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of 0.003 and maximum tunability of 14% at 1000 kV/cm of dc bias field under 1 MHz.

KW - Dielectric properties

KW - Pyrochlore

KW - Sputtering

KW - Tunability

UR - http://www.scopus.com/inward/record.url?scp=0036848713&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00744-7

DO - 10.1016/S0040-6090(02)00744-7

M3 - Article

AN - SCOPUS:0036848713

SN - 0040-6090

VL - 419

SP - 183

EP - 188

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -