W-band injection-locked frequency octupler using a push-push output structure

Kwangwon Park; Dongkyo Kim; Iljin Lee; Sanggeun Jeon

doi:10.1109/LMWC.2019.2946112

W-band injection-locked frequency octupler using a push-push output structure

Kwangwon Park, Dongkyo Kim, Iljin Lee, Sanggeun Jeon

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.

Original language	English
Article number	2946112
Pages (from-to)	822-825
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/LMWC.2019.2946112
Publication status	Published - 2019 Dec

Bibliographical note

Funding Information:
Manuscript received July 23, 2019; revised September 3, 2019; accepted October 2, 2019. Date of publication October 21, 2019; date of current version December 4, 2019. This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korean Government (MSIT) under Grant 2016-0-00185. (Corresponding author: Sanggeun Jeon.) The authors are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: [email protected]).

Funding Information:
This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korean Government (MSIT) under Grant 2016-0-00185. The authors would like to thank K. Choi from Seoul National University for W-band spectral measurements.

Publisher Copyright:
© 2019 IEEE

Keywords

Injection-locked frequency octupler (ILFO)
Multiplication factor
Push-push oscillator
W-band frequency

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2019.2946112

Cite this

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title = "W-band injection-locked frequency octupler using a push-push output structure",

abstract = "This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.",

keywords = "Injection-locked frequency octupler (ILFO), Multiplication factor, Push-push oscillator, W-band frequency",

author = "Kwangwon Park and Dongkyo Kim and Iljin Lee and Sanggeun Jeon",

note = "Funding Information: Manuscript received July 23, 2019; revised September 3, 2019; accepted October 2, 2019. Date of publication October 21, 2019; date of current version December 4, 2019. This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korean Government (MSIT) under Grant 2016-0-00185. (Corresponding author: Sanggeun Jeon.) The authors are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: [email protected]). Funding Information: This work was supported by Institute of Information & Communications Technology Planning & Evaluation (IITP) grant funded by the Korean Government (MSIT) under Grant 2016-0-00185. The authors would like to thank K. Choi from Seoul National University for W-band spectral measurements. Publisher Copyright: {\textcopyright} 2019 IEEE",

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N2 - This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.

AB - This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.

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W-band injection-locked frequency octupler using a push-push output structure

Abstract

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Keywords

ASJC Scopus subject areas

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