Wafer level forward current reliability analysis of 120GHz production SiGe HBTs under accelerated current stress

Keyphrases

• Accelerated Stress 33%
• Bipolar Transistor 33%
• Catastrophic Failure 33%
• Current Acceleration 33%
• Current Mode 33%
• Current Stress 100%
• Degradation Properties 33%
• Device Characteristics 33%
• Device Degradation 33%
• End-of-life Failure 33%
• Fmax 33%
• Forward Current 100%
• Interfacial Properties 33%
• Moderate Temperature 33%
• Module Level 66%
• Parameter Shifts 33%
• Polysilicon 33%
• Polysilicon Emitter 33%
• Reliability Analysis 100%
• Reliability Methodology 33%
• Reliability Techniques 33%
• Self-aligned 33%
• Self-heating 33%
• SiGe HBT 100%
• Single Crystal 33%
• Stress-driven 33%
• Temperature Acceleration 33%
• Wafer Level 100%
• Wafer Level Reliability 66%

Engineering

• Bipolar Transistor 50%
• Catastrophic Failure 50%
• Life Failure 50%
• Moderate Temperature 50%
• Observables 50%
• Polysilicon 100%
• Property Degradation 50%
• Reliability Analysis 100%
• Stress Level 50%

Earth and Planetary Sciences

• Bipolar Transistor 50%
• Emitter 100%
• Reliability Analysis 100%
• Single Crystal 50%