Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Gil Soo Park; Ji Hyuk Yu; Sang Won Seo; Woo Beom Choi; Kyeong Kap Paek; Man Young Sung; Heung Woo Park; Sang Kyeong Yun; Byeong Kwon Ju

doi:10.4028/0-87849-415-4.617

Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Gil Soo Park, Ji Hyuk Yu, Sang Won Seo, Woo Beom Choi, Kyeong Kap Paek, Man Young Sung, Heung Woo Park, Sang Kyeong Yun, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

Abstract

Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10^-11 Pa m³/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

Original language	English
Pages (from-to)	617-620
Number of pages	4
Journal	Key Engineering Materials
Volume	326-328 I
DOIs	https://doi.org/10.4028/0-87849-415-4.617
Publication status	Published - 2006

Keywords

Gold-gold bonding
RF-MEMS packaging
Thermocompression bonding
Wafer level packaging

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.4028/0-87849-415-4.617

Cite this

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title = "Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers",

abstract = "Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.",

keywords = "Gold-gold bonding, RF-MEMS packaging, Thermocompression bonding, Wafer level packaging",

author = "Park, {Gil Soo} and Yu, {Ji Hyuk} and Seo, {Sang Won} and Choi, {Woo Beom} and Paek, {Kyeong Kap} and Sung, {Man Young} and Park, {Heung Woo} and Yun, {Sang Kyeong} and Ju, {Byeong Kwon}",

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doi = "10.4028/0-87849-415-4.617",

language = "English",

volume = "326-328 I",

pages = "617--620",

journal = "Key Engineering Materials",

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T1 - Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

AU - Park, Gil Soo

AU - Yu, Ji Hyuk

AU - Seo, Sang Won

AU - Choi, Woo Beom

AU - Paek, Kyeong Kap

AU - Sung, Man Young

AU - Park, Heung Woo

AU - Yun, Sang Kyeong

AU - Ju, Byeong Kwon

PY - 2006

Y1 - 2006

N2 - Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

AB - Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

KW - Gold-gold bonding

KW - RF-MEMS packaging

KW - Thermocompression bonding

KW - Wafer level packaging

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Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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