Abstract
Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.
Original language | English |
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Pages (from-to) | 617-620 |
Number of pages | 4 |
Journal | Key Engineering Materials |
Volume | 326-328 I |
DOIs | |
Publication status | Published - 2006 |
Keywords
- Gold-gold bonding
- RF-MEMS packaging
- Thermocompression bonding
- Wafer level packaging
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering