Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Gil Soo Park; Ji Hyuk Yu; Sang Won Seo; Woo Beom Choi; Kyeong Kap Paek; Man Young Sung; Heung Woo Park; Sang Kyeong Yun; Byeong Kwon Ju

doi:10.4028/0-87849-415-4.617

Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Gil Soo Park^*
, Ji Hyuk Yu
, Sang Won Seo
, Woo Beom Choi
, Kyeong Kap Paek
, Man Young Sung
, Heung Woo Park
, Sang Kyeong Yun
, Byeong Kwon Ju

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10^-11 Pa m³/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

Original language	English
Pages (from-to)	617-620
Number of pages	4
Journal	Key Engineering Materials
Volume	326-328 I
DOIs	https://doi.org/10.4028/0-87849-415-4.617
Publication status	Published - 2006

Keywords

Gold-gold bonding
RF-MEMS packaging
Thermocompression bonding
Wafer level packaging

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.4028/0-87849-415-4.617

Cite this

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title = "Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers",

abstract = "Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.",

keywords = "Gold-gold bonding, RF-MEMS packaging, Thermocompression bonding, Wafer level packaging",

author = "Park, \{Gil Soo\} and Yu, \{Ji Hyuk\} and Seo, \{Sang Won\} and Choi, \{Woo Beom\} and Paek, \{Kyeong Kap\} and Sung, \{Man Young\} and Park, \{Heung Woo\} and Yun, \{Sang Kyeong\} and Ju, \{Byeong Kwon\}",

year = "2006",

doi = "10.4028/0-87849-415-4.617",

language = "English",

volume = "326-328 I",

pages = "617--620",

journal = "Key Engineering Materials",

issn = "1013-9826",

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TY - JOUR

T1 - Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

AU - Park, Gil Soo

AU - Yu, Ji Hyuk

AU - Seo, Sang Won

AU - Choi, Woo Beom

AU - Paek, Kyeong Kap

AU - Sung, Man Young

AU - Park, Heung Woo

AU - Yun, Sang Kyeong

AU - Ju, Byeong Kwon

PY - 2006

Y1 - 2006

N2 - Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

AB - Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320°C at a pressure of 2.5MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9GHz.

KW - Gold-gold bonding

KW - RF-MEMS packaging

KW - Thermocompression bonding

KW - Wafer level packaging

UR - https://www.scopus.com/pages/publications/33751505923

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DO - 10.4028/0-87849-415-4.617

M3 - Article

AN - SCOPUS:33751505923

SN - 1013-9826

VL - 326-328 I

SP - 617

EP - 620

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Wafer level hermetic packaging for RF-MEMS devices using electroplated gold layers

Abstract

Keywords

ASJC Scopus subject areas

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