Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well fabry-pérot laser diode

Jae Ho Han; Sung Woong Park

doi:10.1109/TDMR.2005.860555

Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well fabry-pérot laser diode

Jae Ho Han, Sung Woong Park

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This paper investigated the reliability of semiconductor 1.3-μm multiquantum-well (MQW) Fabry-Pérot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85°C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2 × 10⁶ h operating at room temperature.

Original language	English
Pages (from-to)	683-687
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	5
Issue number	4
DOIs	https://doi.org/10.1109/TDMR.2005.860555
Publication status	Published - 2005 Dec
Externally published	Yes

Keywords

Laser reliability
Materials reliability
Optoelectronic devices
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2005.860555

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title = "Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well fabry-p{\'e}rot laser diode",

abstract = "This paper investigated the reliability of semiconductor 1.3-μm multiquantum-well (MQW) Fabry-P{\'e}rot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85°C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2 × 106 h operating at room temperature.",

keywords = "Laser reliability, Materials reliability, Optoelectronic devices, Semiconductor lasers",

author = "Han, {Jae Ho} and Park, {Sung Woong}",

year = "2005",

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doi = "10.1109/TDMR.2005.860555",

language = "English",

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AU - Park, Sung Woong

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N2 - This paper investigated the reliability of semiconductor 1.3-μm multiquantum-well (MQW) Fabry-Pérot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85°C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2 × 106 h operating at room temperature.

AB - This paper investigated the reliability of semiconductor 1.3-μm multiquantum-well (MQW) Fabry-Pérot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85°C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2 × 106 h operating at room temperature.

KW - Laser reliability

KW - Materials reliability

KW - Optoelectronic devices

KW - Semiconductor lasers

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JO - IEEE Transactions on Device and Materials Reliability

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Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well fabry-pérot laser diode

Abstract

Keywords

ASJC Scopus subject areas

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