Wafer level reliability evaluation of 120GHz SiGe HBT's

Engineering

• Bipolar Transistor 100%
• Heterojunctions 50%
• Longer Term 50%
• Material System 50%
• Max 50%
• Moderate Temperature 50%
• Observables 50%
• Polysilicon 50%
• Property Degradation 50%
• Reliability Evaluation 100%
• Successful Implementation 50%

Material Science

• Bipolar Transistor 100%
• Heterojunction 50%
• Transistor 50%

Keyphrases

• Packaged Transistor 25%
• Reliability Approach 25%