Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics

Jung Joon Pyeon, In Hwan Baek, Woo Chul Lee, Hansol Lee, Sung Ok Won, Ga Yeon Lee, Taek Mo Chung, Jeong Hwan Han, Seung Hyub Baek, Jin Sang Kim, Ji Won Choi, Chong Yun Kang, Seong Keun Kim

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Two-dimensional (2D) metal dichalcogenides have drawn considerable interest because they offer possibilities for the implementation of emerging electronics. The emerging electronics are moving toward two major directions: vertical expansion of device space and flexibility. However, the development of a synthesis method for 2D metal dichalcogenides that meets all the requirements remains a significant challenge. Here, we propose a promising method for wafer-scale, conformal, and low-temperature (≤240 °C) synthesis of single-phase SnS2 via the atomic layer deposition technique. There is a trade-off relationship between the crystallinity and orientation preference of SnS2, which is efficiently eliminated by the two-step growth occurring at different temperatures. Consequently, the van der Waals layers of the highly crystalline SnS2 are parallel to the substrate. Thin-film transistors (TFTs) comprising the SnS2 layer show reasonable electrical performances (field-effect mobility: ∼0.8 cm2 V-1 s-1 and on/off ratio: ∼106), which are comparable to that of a single-crystal SnS2 flake. Moreover, we demonstrate nonplanar and flexible TFTs to identify the feasibility of the implementation of future electronics. Both the diagonal-structured TFT and flexible TFT fabricated without a transfer process show electrical performances comparable to those of rigid and planar TFTs. Particularly, the flexible TFT does not exhibit substantial degradation even after 2000 bending cycles. Our work would provide decisive opportunities for the implementation of future electronic devices utilizing 2D metal chalcogenides.

Original languageEnglish
Pages (from-to)2679-2686
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number2
Publication statusPublished - 2020 Jan 15

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Science and Technology (KIST through 2E29400).

Publisher Copyright:
© 2019 American Chemical Society.


  • SnS
  • atomic layer deposition
  • flexible devices
  • low temperatures
  • non-planar devices
  • thin film transistors

ASJC Scopus subject areas

  • General Materials Science


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