Wafer-scale growth of ITO nanorods by radio frequency magnetron sputtering deposition

Jae Hyoung Park, Hoo Keun Park, Jinhoo Jeong, Woong Kim, Byoung Koun Min, Young Rag Do

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35 Citations (Scopus)


We demonstrate synthesis of tin-doped indium oxide (ITO) nanorods on 2-in. glass wafers via radio frequency (rf)-magnetron sputtering deposition. The nanorods possessed a single-crystal structure of bixbyite, grew along the >100< orientation of the cubic unit cell, and were vertically aligned to the substrates. Height and diameter of the nanorods were as large as ∼810 nm and 40-100 nm, respectively. The morphological, structural, compositional, optical, and electrical properties of the ITO nanorods were examined with respect to growth temperature (25-500°C) and growth time (10-60 min). ITO nanorod films synthesized at 500°C exhibited excellent electrical and optical property such as a low sheet resistance (∼41ω) and high transparency in the wavelength range of visible light (i.e., ∼87 transmission at 550 nm). The facile approach to synthesize ITO nanorods at a large scale demonstrated in this work may find various applications including the fabrication of high performance optoelectronic devices.

Original languageEnglish
Pages (from-to)K131-K135
JournalJournal of the Electrochemical Society
Issue number5
Publication statusPublished - 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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