Abstract
We demonstrate synthesis of tin-doped indium oxide (ITO) nanorods on 2-in. glass wafers via radio frequency (rf)-magnetron sputtering deposition. The nanorods possessed a single-crystal structure of bixbyite, grew along the >100< orientation of the cubic unit cell, and were vertically aligned to the substrates. Height and diameter of the nanorods were as large as ∼810 nm and 40-100 nm, respectively. The morphological, structural, compositional, optical, and electrical properties of the ITO nanorods were examined with respect to growth temperature (25-500°C) and growth time (10-60 min). ITO nanorod films synthesized at 500°C exhibited excellent electrical and optical property such as a low sheet resistance (∼41ω) and high transparency in the wavelength range of visible light (i.e., ∼87 transmission at 550 nm). The facile approach to synthesize ITO nanorods at a large scale demonstrated in this work may find various applications including the fabrication of high performance optoelectronic devices.
Original language | English |
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Pages (from-to) | K131-K135 |
Journal | Journal of the Electrochemical Society |
Volume | 158 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2011 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry