Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

Jihyun Kim, Janghyuk Kim, Geonyeop Lee

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32 Citations (Scopus)


We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO2/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 1015cm-2 onto the surface of the Ni/SiO2/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600-900 °C) to form a sp2-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.

Original languageEnglish
Article number033104
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2015 Jul 20

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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