@inproceedings{9e27f9a44f2d42b0958f94b1d4c0de08,
title = "Wafer to wafer direct bonding using surfaces activated by hydrogen plasma treatment",
abstract = "A method of direct wafer bonding using surfaces activated by a radiofrequency hydrogen plasma for the silicon on insulator (SOI) applications is described. The hydrogen plasma cleaning of silicon in the reactive ion etching mode is investigated as a pretreatment for silicon direct bonding. The scheme can reduce the concentration of carbon impurity at the surface below 5 at.% level. The surface becomes smoother with decreasing plasma exposure time and power.",
author = "Choi, {W. B.} and Ju, {C. M.} and Ju, {B. K.} and Sung, {M. Y.}",
year = "1999",
language = "English",
isbn = "0780355032",
series = "Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium",
publisher = "IEEE",
booktitle = "Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium",
note = "Proceedings of the 1999 24th IEEE/CPMT International Electronics Manufacturing Technology Symposium (IEMT 1999) ; Conference date: 18-10-1999 Through 19-10-1999",
}