Abstract
This paper reports human-body-model (HBM) electrostatic discharge (ESD)-induced wavelength shifts of 1.5 μm InGaAsP/InP distributed feedback (DFB) lasers. Reverse-bias ESD has been exposed to the lasers. Their electrical and optical characteristics are significantly changed after ESD exposure. From most of ESD stressed lasers, the wavelength shifts are measured to be less than 2 å. Subsequent aging results show that the aging-induced wavelength shifts of ESD damaged lasers are less than 0.5 å. No significant impact on reliabilty has been found from ESD damaged lasers. Similar results are obtained from non-ESD damaged lasers except for the shift direction of the lasing wavelengths.
Original language | English |
---|---|
Pages (from-to) | 186-190 |
Number of pages | 5 |
Journal | Journal of Lightwave Technology |
Volume | 13 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1995 Feb |
Bibliographical note
Funding Information:Manuscript received Nov. 14, 1994. This work was supported by Pohang University of Science & Technology, Electronic Telecommunication Research Institute, and by KOSEF-OERC-94-02-02-1. J. Jeong was with the Deptartment of Electronics and Electrical Engineering, POSTECH, Kyungbuk, 790-784, Republic of Korea and is now with the Department of Radio Engineering, Korea University, Seoul, Korea. K. H. Park and H. M. Park are with Compound Semiconductor Div., ETRI, Taejon, 302-606, Republic of Korea. IEEE Log Number 94078157.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics