Wavelet-Based Uniformity of Plasma Etching Surface

Byungwhan Kim, Sungmo Kim, Myo Taeg Lim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Uniformity of plasma etching has been conventionally examined only in terms of etch rate. A uniformity of etching profile surface is increasingly demanded to improve process quality. This is accomplished by applying a discrete wavelet transformation (DWT) to profile images obtained with a scanning electron microscopy. Applicability of DWT-based profile uniformity was evaluated with a tungsten etch experiment, conducted in an SF6 helicon plasma. Its suitability was investigated as a function of process parameters and scale levels. Compared to a conventional metric, the wavelet-based one characterized more effectively the uniformity of profile variations. The proposed metric can be applied to any other plasma-processed surfaces.

Original languageEnglish
Pages (from-to)1313-1316
Number of pages4
JournalIEEE Transactions on Plasma Science
Volume31
Issue number6 II
DOIs
Publication statusPublished - 2003 Dec

Bibliographical note

Funding Information:
Manuscript received February 10, 2003; revised October 7, 2003. This work was supported by the Korea Research Foundation (KRF-2002-041-D00117). B. Kim and S. Kim are with the Department of Electronic Engineering, Se-jong University, Seoul 143-747, Korea (e-mail: kbwhan@sejong.ac.kr). M. T. Lim is with the Department of Electrical Engineering, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/TPS.2003.820967

Keywords

  • Plasma etching surface
  • Uniformity
  • Wavelet

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

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