Wavelet-Based Uniformity of Plasma Etching Surface

Byungwhan Kim; Sungmo Kim; Myo Taeg Lim

doi:10.1109/TPS.2003.820967

Wavelet-Based Uniformity of Plasma Etching Surface

Byungwhan Kim, Sungmo Kim, Myo Taeg Lim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Uniformity of plasma etching has been conventionally examined only in terms of etch rate. A uniformity of etching profile surface is increasingly demanded to improve process quality. This is accomplished by applying a discrete wavelet transformation (DWT) to profile images obtained with a scanning electron microscopy. Applicability of DWT-based profile uniformity was evaluated with a tungsten etch experiment, conducted in an SF₆ helicon plasma. Its suitability was investigated as a function of process parameters and scale levels. Compared to a conventional metric, the wavelet-based one characterized more effectively the uniformity of profile variations. The proposed metric can be applied to any other plasma-processed surfaces.

Original language	English
Pages (from-to)	1313-1316
Number of pages	4
Journal	IEEE Transactions on Plasma Science
Volume	31
Issue number	6 II
DOIs	https://doi.org/10.1109/TPS.2003.820967
Publication status	Published - 2003 Dec

Keywords

Plasma etching surface
Uniformity
Wavelet

ASJC Scopus subject areas

Nuclear and High Energy Physics
Condensed Matter Physics

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10.1109/TPS.2003.820967

Cite this

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title = "Wavelet-Based Uniformity of Plasma Etching Surface",

abstract = "Uniformity of plasma etching has been conventionally examined only in terms of etch rate. A uniformity of etching profile surface is increasingly demanded to improve process quality. This is accomplished by applying a discrete wavelet transformation (DWT) to profile images obtained with a scanning electron microscopy. Applicability of DWT-based profile uniformity was evaluated with a tungsten etch experiment, conducted in an SF6 helicon plasma. Its suitability was investigated as a function of process parameters and scale levels. Compared to a conventional metric, the wavelet-based one characterized more effectively the uniformity of profile variations. The proposed metric can be applied to any other plasma-processed surfaces.",

keywords = "Plasma etching surface, Uniformity, Wavelet",

author = "Byungwhan Kim and Sungmo Kim and Lim, {Myo Taeg}",

note = "Funding Information: Manuscript received February 10, 2003; revised October 7, 2003. This work was supported by the Korea Research Foundation (KRF-2002-041-D00117). B. Kim and S. Kim are with the Department of Electronic Engineering, Se-jong University, Seoul 143-747, Korea (e-mail: kbwhan@sejong.ac.kr). M. T. Lim is with the Department of Electrical Engineering, Korea University, Seoul 136-701, Korea. Digital Object Identifier 10.1109/TPS.2003.820967",

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N2 - Uniformity of plasma etching has been conventionally examined only in terms of etch rate. A uniformity of etching profile surface is increasingly demanded to improve process quality. This is accomplished by applying a discrete wavelet transformation (DWT) to profile images obtained with a scanning electron microscopy. Applicability of DWT-based profile uniformity was evaluated with a tungsten etch experiment, conducted in an SF6 helicon plasma. Its suitability was investigated as a function of process parameters and scale levels. Compared to a conventional metric, the wavelet-based one characterized more effectively the uniformity of profile variations. The proposed metric can be applied to any other plasma-processed surfaces.

AB - Uniformity of plasma etching has been conventionally examined only in terms of etch rate. A uniformity of etching profile surface is increasingly demanded to improve process quality. This is accomplished by applying a discrete wavelet transformation (DWT) to profile images obtained with a scanning electron microscopy. Applicability of DWT-based profile uniformity was evaluated with a tungsten etch experiment, conducted in an SF6 helicon plasma. Its suitability was investigated as a function of process parameters and scale levels. Compared to a conventional metric, the wavelet-based one characterized more effectively the uniformity of profile variations. The proposed metric can be applied to any other plasma-processed surfaces.

KW - Plasma etching surface

KW - Uniformity

KW - Wavelet

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JO - IEEE Transactions on Plasma Science

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Wavelet-Based Uniformity of Plasma Etching Surface

Abstract

Keywords

ASJC Scopus subject areas

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