Wetting of low-carbon, interstitial-free steel surfaces with nanostructured oxides by liquid zinc

  • Joonho Lee*
  • , Joongchul Park
  • , Sun Ho Jeon
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this study, the dynamic reactive wetting of low-carbon, interstitial-free (IF) steel by liquid zinc was investigated. In situ contact angle measurements of a liquid zinc droplet on three steel plates that contained a fixed Mn content (0.4 wt pct) and different Si concentrations (0.1, 0.3, and 0.7 wt pct) were carried out with two charge-coupled device cameras that operated at different recording rates, 3000 frames/second and 6 frames/second. The observed contact angles for the three steel plates started at almost the same value but gradually decreased at different rates with increasing time. The steel plate of medium Si content (0.3 wt pct) showed the best wetting behavior among the tested samples. The wetting characteristics were examined by analyzing the surface coverage, the morphology, and the thickness of the nanostructured oxides that formed on the steel plates during the annealing process.

    Original languageEnglish
    Pages (from-to)1035-1040
    Number of pages6
    JournalMetallurgical and Materials Transactions B: Process Metallurgy and Materials Processing Science
    Volume40
    Issue number6
    DOIs
    Publication statusPublished - 2009 Dec

    Bibliographical note

    Funding Information:
    We greatly appreciate the financial support provided by POSCO for this study. We also are grateful to Professor Toshihiro Tanaka (Osaka University) for his kind discussion and encouragement.

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Mechanics of Materials
    • Metals and Alloys
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'Wetting of low-carbon, interstitial-free steel surfaces with nanostructured oxides by liquid zinc'. Together they form a unique fingerprint.

    Cite this