Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X-band

Seungwon Park; Sanggeun Jeon

doi:10.1049/el.2014.4541

Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X-band

Seungwon Park
, Sanggeun Jeon^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A wideband power amplifier (PA) with high output power and efficiency over the entire X-band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic-tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power-added efficiency (PAE) are no less than 19.5 dBm and 22.6%, respectively, over the entire X-band. The peak PAE is 28.9% with an output power of 20.3 dBm at 9 GHz.

Original language	English
Pages (from-to)	703-705
Number of pages	3
Journal	Electronics Letters
Volume	51
Issue number	9
DOIs	https://doi.org/10.1049/el.2014.4541
Publication status	Published - 2015 Apr 30

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Publisher Copyright:
© 2015 The Institution of Engineering and Technology.

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2014.4541

Cite this

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title = "Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6\% PAE over entire X-band",

abstract = "A wideband power amplifier (PA) with high output power and efficiency over the entire X-band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic-tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power-added efficiency (PAE) are no less than 19.5 dBm and 22.6\%, respectively, over the entire X-band. The peak PAE is 28.9\% with an output power of 20.3 dBm at 9 GHz.",

author = "Seungwon Park and Sanggeun Jeon",

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year = "2015",

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doi = "10.1049/el.2014.4541",

language = "English",

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AU - Park, Seungwon

AU - Jeon, Sanggeun

PY - 2015/4/30

Y1 - 2015/4/30

N2 - A wideband power amplifier (PA) with high output power and efficiency over the entire X-band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic-tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power-added efficiency (PAE) are no less than 19.5 dBm and 22.6%, respectively, over the entire X-band. The peak PAE is 28.9% with an output power of 20.3 dBm at 9 GHz.

AB - A wideband power amplifier (PA) with high output power and efficiency over the entire X-band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic-tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power-added efficiency (PAE) are no less than 19.5 dBm and 22.6%, respectively, over the entire X-band. The peak PAE is 28.9% with an output power of 20.3 dBm at 9 GHz.

UR - https://www.scopus.com/pages/publications/84928717626

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DO - 10.1049/el.2014.4541

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JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X-band

Abstract

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