Abstract
A modified MOS REL structure is proposed, which exhibits the wired-OR property and enhances speed and power characteristics. Proposed MOS REL gates have been fabricated and tested. It is shown that the power x delay product of an MOS REL inverter is enhanced by 26% with a smaller silicon area.
Original language | English |
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Pages (from-to) | 760-762 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 33 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1997 Apr 24 |
Keywords
- Logic circuits
- Logic design
ASJC Scopus subject areas
- Electrical and Electronic Engineering