Abstract
A modified MOS REL structure is proposed, which exhibits the wired-OR property and enhances speed and power characteristics. Proposed MOS REL gates have been fabricated and tested. It is shown that the power x delay product of an MOS REL inverter is enhanced by 26% with a smaller silicon area.
| Original language | English |
|---|---|
| Pages (from-to) | 760-762 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1997 Apr 24 |
Keywords
- Logic circuits
- Logic design
ASJC Scopus subject areas
- Electrical and Electronic Engineering