Work function increase of Al-doped ZnO thin films by B+ ion implantation

Sang Jin Hong; Gi Seok Heo; Jong Woon Park; In Hwan Lee; Bum Ho Choi; Jong Ho Lee; Se Yeon Park; Dong Chan Shin

doi:10.1166/jnn.2007.090

Work function increase of Al-doped ZnO thin films by B+ ion implantation

Sang Jin Hong, Gi Seok Heo, Jong Woon Park, In Hwan Lee, Bum Ho Choi, Jong Ho Lee, Se Yeon Park, Dong Chan Shin

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The work function of an Al-doped ZnO (AZO) thin film can be increased via B ⁺ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 × 10 ¹⁶ cm ^-2 and ion energy of 5 keV. The resistance of the B ⁺ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B ⁺ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

Original language	English
Pages (from-to)	4077-4080
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	7
Issue number	11
DOIs	https://doi.org/10.1166/jnn.2007.090
Publication status	Published - 2007 Nov
Externally published	Yes

Keywords

Al-Doped ZnO
Implantation
TCO
Work Function

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2007.090

Cite this

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title = "Work function increase of Al-doped ZnO thin films by B+ ion implantation",

abstract = "The work function of an Al-doped ZnO (AZO) thin film can be increased via B + ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 × 10 16 cm -2 and ion energy of 5 keV. The resistance of the B + implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B + ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.",

keywords = "Al-Doped ZnO, Implantation, TCO, Work Function",

author = "Hong, {Sang Jin} and Heo, {Gi Seok} and Park, {Jong Woon} and Lee, {In Hwan} and Choi, {Bum Ho} and Lee, {Jong Ho} and Park, {Se Yeon} and Shin, {Dong Chan}",

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T1 - Work function increase of Al-doped ZnO thin films by B+ ion implantation

AU - Hong, Sang Jin

AU - Heo, Gi Seok

AU - Park, Jong Woon

AU - Lee, In Hwan

AU - Choi, Bum Ho

AU - Lee, Jong Ho

AU - Park, Se Yeon

AU - Shin, Dong Chan

PY - 2007/11

Y1 - 2007/11

N2 - The work function of an Al-doped ZnO (AZO) thin film can be increased via B + ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 × 10 16 cm -2 and ion energy of 5 keV. The resistance of the B + implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B + ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

AB - The work function of an Al-doped ZnO (AZO) thin film can be increased via B + ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 × 10 16 cm -2 and ion energy of 5 keV. The resistance of the B + implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B + ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

KW - Al-Doped ZnO

KW - Implantation

KW - TCO

KW - Work Function

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ER -

Work function increase of Al-doped ZnO thin films by B+ ion implantation

Abstract

Keywords

ASJC Scopus subject areas

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