Writing Current Reduction for High-Density Phase-Change RAM

Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, H. S. Hong, H. C. Koo, F. Yeung, J. H. Oh, H. J. Kim, W. C. Jeong, J. H. Park, H. Horii, Y. H. Ha, J. H. Yi, G. H. Koh, G. T. Jeong, H. S. Jeong, Kinam Kim

Research output: Contribution to journalConference articlepeer-review

92 Citations (Scopus)


By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors in function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7mA.

Original languageEnglish
Pages (from-to)893-896
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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