Writing Current Reduction for High-Density Phase-Change RAM

Y. N. Hwang; S. H. Lee; S. J. Ahn; S. Y. Lee; K. C. Ryoo; H. S. Hong; H. C. Koo; F. Yeung; J. H. Oh; H. J. Kim; W. C. Jeong; J. H. Park; H. Horii; Y. H. Ha; J. H. Yi; G. H. Koh; G. T. Jeong; H. S. Jeong; Kinam Kim

Writing Current Reduction for High-Density Phase-Change RAM

Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, H. S. Hong, H. C. Koo, F. Yeung, J. H. Oh, H. J. Kim, W. C. Jeong, J. H. Park, H. Horii, Y. H. Ha, J. H. Yi, G. H. Koh, G. T. Jeong, H. S. Jeong, Kinam Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Conference article › peer-review

89 Citations (Scopus)

Abstract

By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors in function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7mA.

Original language	English
Pages (from-to)	893-896
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{92d4f4b7c81340f7981cc5674be4b7aa,

title = "Writing Current Reduction for High-Density Phase-Change RAM",

abstract = "By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors in function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7mA.",

author = "Hwang, {Y. N.} and Lee, {S. H.} and Ahn, {S. J.} and Lee, {S. Y.} and Ryoo, {K. C.} and Hong, {H. S.} and Koo, {H. C.} and F. Yeung and Oh, {J. H.} and Kim, {H. J.} and Jeong, {W. C.} and Park, {J. H.} and H. Horii and Ha, {Y. H.} and Yi, {J. H.} and Koh, {G. H.} and Jeong, {G. T.} and Jeong, {H. S.} and Kinam Kim",

year = "2003",

language = "English",

pages = "893--896",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Writing Current Reduction for High-Density Phase-Change RAM

AU - Hwang, Y. N.

AU - Lee, S. H.

AU - Ahn, S. J.

AU - Lee, S. Y.

AU - Ryoo, K. C.

AU - Hong, H. S.

AU - Koo, H. C.

AU - Yeung, F.

AU - Oh, J. H.

AU - Kim, H. J.

AU - Jeong, W. C.

AU - Park, J. H.

AU - Horii, H.

AU - Ha, Y. H.

AU - Yi, J. H.

AU - Koh, G. H.

AU - Jeong, G. T.

AU - Jeong, H. S.

AU - Kim, Kinam

PY - 2003

Y1 - 2003

N2 - By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors in function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7mA.

AB - By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors in function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7mA.

UR - http://www.scopus.com/inward/record.url?scp=17644439354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17644439354&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17644439354

SN - 0163-1918

SP - 893

EP - 896

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Writing Current Reduction for High-Density Phase-Change RAM

Abstract

ASJC Scopus subject areas

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