Zinc cadmium oxide thin film transistors fabricated at room temperature

Deuk Hee Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Zinc cadmium oxide (ZnCdO) transparent thin film transistors (TFTs) have been fabricated with a back-gate structure using highly p-type Si (001) substrate. For the active channel, 30 nm, 50 nm, and 100 nm thick ZnCdO thin films were grown by pulsed laser deposition. The ZnCdO thin films were wurtzite hexagonal structure with preferred growth along the (002) direction. All the samples were found to be highly transparent with an average transmission of about 80%~ in the visible range. We have investigated the change of the performance of ZnCdO TFTs as the thickness of the active layer is increased. The carrier concentration of ZnCdO thin films has been confirmed to be increased from 1016 to 1019 cm-3 as the film thickness increased from 30 to 100 nm. Base on this result, the ZnCdO TFTs show a thickness-dependent performance which is ascribed to the carrier concentration in the active layer. The ZnCdO TFT with 30 nm active layer showed good off-current characteristic of below ~ 1011, threshold voltage of 4.69 V, a subthreshold swing of 4.2 V/decade, mobility of 0.17 cm2/V s, and on-to-off current ratios of 3.37 × 104.

Original languageEnglish
Pages (from-to)4361-4365
Number of pages5
JournalThin Solid Films
Issue number13
Publication statusPublished - 2011 Apr 29


  • Pulsed laser deposition
  • Thin film transistors
  • Zinc cadmium oxide
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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