Abstract
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of ≈λ/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface.
Original language | English |
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Pages (from-to) | 7827-7830 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 47 |
Issue number | 10 PART 1 |
DOIs | |
Publication status | Published - 2008 Oct |
Keywords
- GaN
- Micro cavity light-emitting diode
- Photonic crystal
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy