Zn/Au ohmic contacts on n-type ZnO epitaxial layers for light-emitting devices

Sang Ho Kim, Seong Wook Jeong, Dae Kue Hwang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


We have investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, The Zn/Au contacts produce linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient. The samples annealed at 500°C yielded contact resistivity as low as 2.36 × 10-5 Ω cm2. However, annealing the samples at 600°C degraded their electrical characteristics with contact resistivity of 1.01 × 10 -2 Ω cm2. Based on the X-ray diffraction and X-ray photoemission spectroscopy results, the possible formation and degradation mechanisms of the Zn/Au contacts are described and discussed.

Original languageEnglish
Pages (from-to)G198-G200
JournalElectrochemical and Solid-State Letters
Issue number8
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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