We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/ Mg0.2 Zn0.8 O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2 /V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2 Zn0.8 O shell layer are presumably responsible for the highly enhanced device performance.
Bibliographical noteFunding Information:
This work was financially supported by the National Creative Research Initiative Project (Grant No. R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)