ZnO nanorods for electronic nanodevice applications

Gyu Chul Yi; Won Il Park; H. J. Kim; C. H. Lee

doi:10.1109/NMDC.2006.4388728

ZnO nanorods for electronic nanodevice applications

Gyu Chul Yi, Won Il Park, H. J. Kim, C. H. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm²/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	164-165
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388728
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Field effect transistors (FETs)
Logic gates
Nanodevice
Schottky didoes
ZnO nanorods

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388728

Cite this

Yi, GC, Park, WI, Kim, HJ & Lee, CH 2006, ZnO nanorods for electronic nanodevice applications. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388728, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 164-165, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388728

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title = "ZnO nanorods for electronic nanodevice applications",

abstract = "We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.",

keywords = "Field effect transistors (FETs), Logic gates, Nanodevice, Schottky didoes, ZnO nanorods",

author = "Yi, {Gyu Chul} and Park, {Won Il} and Kim, {H. J.} and Lee, {C. H.}",

year = "2006",

doi = "10.1109/NMDC.2006.4388728",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "164--165",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

TY - GEN

T1 - ZnO nanorods for electronic nanodevice applications

AU - Yi, Gyu Chul

AU - Park, Won Il

AU - Kim, H. J.

AU - Lee, C. H.

PY - 2006

Y1 - 2006

N2 - We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

AB - We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process, further resulting in realization of ZnO nanorod logic gates.

KW - Field effect transistors (FETs)

KW - Logic gates

KW - Nanodevice

KW - Schottky didoes

KW - ZnO nanorods

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U2 - 10.1109/NMDC.2006.4388728

DO - 10.1109/NMDC.2006.4388728

M3 - Conference contribution

AN - SCOPUS:50249168220

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 164

EP - 165

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

ZnO nanorods for electronic nanodevice applications

Abstract

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Keywords

ASJC Scopus subject areas

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