ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Joondong Kim; Ju Hyung Yun; Chang Hyun Kim; Yun Chang Park; Ju Yeon Woo; Jeunghee Park; Jung Ho Lee; Junsin Yi; Chang Soo Han

doi:10.1088/0957-4484/21/11/115205

ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Joondong Kim, Ju Hyung Yun, Chang Hyun Kim, Yun Chang Park, Ju Yeon Woo, Jeunghee Park, Jung Ho Lee, Junsin Yi, Chang Soo Han

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

Original language	English
Article number	115205
Journal	Nanotechnology
Volume	21
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/21/11/115205
Publication status	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/21/11/115205

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title = "ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect",

abstract = "A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.",

author = "Joondong Kim and Yun, {Ju Hyung} and Kim, {Chang Hyun} and Park, {Yun Chang} and Woo, {Ju Yeon} and Jeunghee Park and Lee, {Jung Ho} and Junsin Yi and Han, {Chang Soo}",

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T1 - ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

AU - Kim, Joondong

AU - Yun, Ju Hyung

AU - Kim, Chang Hyun

AU - Park, Yun Chang

AU - Woo, Ju Yeon

AU - Park, Jeunghee

AU - Lee, Jung Ho

AU - Yi, Junsin

AU - Han, Chang Soo

PY - 2010

Y1 - 2010

N2 - A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

AB - A zinc oxide nanowire(ZnO NW)-embedded Schottky diode was fabricated for UV detection. Two types of devices were prepared. The ZnO NW was positioned onto asymmetric metal electrodes (Al and Pt) for a Schottky device or symmetric metal electrodes (Al and Al) for an ohmic device, respectively. The Schottky device provided a rectifying current flow and was more sensitive to UV illumination than the ohmic device. The Schottky barrier plays an important role for UV detection by a UV-induced barrier reduction effect. The fabrication of the ZnO NW-embedded Schottky diode and the UV reaction mechanism are discussed in light of the UV light-induced Schottky barrier reduction effect.

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DO - 10.1088/0957-4484/21/11/115205

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AN - SCOPUS:77349099734

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

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ER -

ZnO nanowire-embedded Schottky diode for effective UV detection by the barrier reduction effect

Abstract

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