Abstract
We demonstrate that drain-source (V ds) and gate-source voltages (V gs) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V gs is positioned at the "bottom" of the subthreshold swing region.
| Original language | English |
|---|---|
| Pages (from-to) | 179-182 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 206 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Jan |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry