Abstract
In this work, a single ZnO nanowire field-effect transistor (NWFET) with discrete-trap storage nodes of Pt nanocrystals (NCs) embedded within Al 2O3, a high-κ tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non-volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16 V under the ±15 V gate-source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 105 for the on/off current ratio for read-out of storage data. Furthermore, memory features, such as programming efficiency and on-cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors.
Original language | English |
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Pages (from-to) | 1912-1916 |
Number of pages | 5 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 211 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2014 Aug |
Keywords
- ZnO
- flexible substrates
- nanocrystals
- nanowires
- non-volatile memory
- platinum
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry