ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices

Dae Hyun Kim; Han Kyeol Lee; Jin Young Na; Sun Kyung Kim; Young Zo Yoo; Tae Yeon Seong

doi:10.1016/j.spmi.2015.04.002

ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices

Dae Hyun Kim, Han Kyeol Lee, Jin Young Na, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 10²¹ to 1.11 × 10²² cm^-3 and the mobility increases from 8.14 to 17.4 cm²/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10^-3 Ω^-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.

Original language	English
Pages (from-to)	635-641
Number of pages	7
Journal	Superlattices and Microstructures
Volume	83
DOIs	https://doi.org/10.1016/j.spmi.2015.04.002
Publication status	Published - 2015 Jul 1

Keywords

Ag
ITO
Multilayer
Transparent conducting electrode
ZTO

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2015.04.002

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@article{b2e17bc97ce84a0aa4e72f7b4f944bfc,

title = "ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices",

abstract = "To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 1021 to 1.11 × 1022 cm-3 and the mobility increases from 8.14 to 17.4 cm2/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10-3 Ω-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.",

keywords = "Ag, ITO, Multilayer, Transparent conducting electrode, ZTO",

author = "Kim, {Dae Hyun} and Lee, {Han Kyeol} and Na, {Jin Young} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by Korea Evaluation Institute of Industrial Technology (Grant No. 10049601 ). S.-K.K. was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2013R1A1A1059423). Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. All rights reserved.",

year = "2015",

month = jul,

day = "1",

doi = "10.1016/j.spmi.2015.04.002",

language = "English",

volume = "83",

pages = "635--641",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices

AU - Kim, Dae Hyun

AU - Lee, Han Kyeol

AU - Na, Jin Young

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Korea Evaluation Institute of Industrial Technology (Grant No. 10049601 ). S.-K.K. was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2013R1A1A1059423). Publisher Copyright: © 2015 Elsevier Ltd. All rights reserved.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 1021 to 1.11 × 1022 cm-3 and the mobility increases from 8.14 to 17.4 cm2/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10-3 Ω-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.

AB - To replace thick ITO single layer electrodes, ZnSnO (ZTO)/Ag/indium tin oxide (ITO) multilayer films were investigated as a function of Ag layer thickness. The ZTO/Ag/ITO films showed maximum transmittance in the range of 79.4-89.2%, depending on the Ag layer thickness. The relationship between transmittance and Ag thickness was simulated using the scattering matrix method to understand the high transmittance. As the Ag thickness increases from 6 to 14 nm, the carrier concentration increases from 4.12 × 1021 to 1.11 × 1022 cm-3 and the mobility increases from 8.14 to 17.4 cm2/V s. The ZTO (20 nm)/Ag (10 nm)/ITO (30 nm) multilayer films had a sheet resistance of 9 Ω/sq. The ZTO/Ag/ITO multilayer had Haacke's figure of merit of 28.3 × 10-3 Ω-1. The ZTO/Ag/ITO films deposited on PET substrates showed dramatically improved mechanical flexibility when subjected to bending test compared to 60 nm-thick ITO single layer electrodes.

KW - Ag

KW - ITO

KW - Multilayer

KW - Transparent conducting electrode

KW - ZTO

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DO - 10.1016/j.spmi.2015.04.002

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SN - 0749-6036

VL - 83

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EP - 641

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices

Abstract

Keywords

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