Abstract
In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.
Original language | English |
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Article number | 063304 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2013 Aug 5 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)