Abstract
In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.
Original language | English |
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Article number | 063304 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2013 Aug 5 |
Bibliographical note
Funding Information:This work was supported by Korea University, LG Yonam Foundation and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF20100020209).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)