ZrO₂ dielectric-based low-voltage organic thin-film inverters

In this paper, the authors first report ZrO₂-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO₂ using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.