ZrO2 dielectric-based low-voltage organic thin-film inverters

Jeong Do Oh; Hoon Seok Seo; Eun Sol Shin; Dae Kyu Kim; Young Geun Ha; Jong Ho Choi

doi:10.1063/1.4818269

ZrO₂ dielectric-based low-voltage organic thin-film inverters

Jeong Do Oh, Hoon Seok Seo, Eun Sol Shin, Dae Kyu Kim, Young Geun Ha, Jong Ho Choi

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this paper, the authors first report ZrO₂-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO₂ using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.

Original language	English
Article number	063304
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4818269
Publication status	Published - 2013 Aug 5

Bibliographical note

Funding Information:
This work was supported by Korea University, LG Yonam Foundation and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF20100020209).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4818269

Cite this

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title = "ZrO2 dielectric-based low-voltage organic thin-film inverters",

abstract = "In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.",

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AU - Oh, Jeong Do

AU - Seo, Hoon Seok

AU - Shin, Eun Sol

AU - Kim, Dae Kyu

AU - Ha, Young Geun

AU - Choi, Jong Ho

N1 - Funding Information: This work was supported by Korea University, LG Yonam Foundation and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF20100020209).

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AB - In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N′-dioctyl-3,4,9,10- perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p- and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels.

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